data sheet semiconductor http://www.yeashin.com 1 rev.02 20120305 kbpc6005 thru kbpc610 technical sp eci f ications of single-phase silicon bridge rectifie r voltage range - 50 to 1000 volts current - 6.0 amperes fe a t ures ?e surge ov erload r a ting : 12 5 ampe res pea k ?e l o w forw ard v o ltage drop ?e sm all si ze: sim p l e in stall a tion ?e high tempera t ure sol dering : 260 o c / 10 se cond s at te r m inals ?e pb free produ ct a t av ailable : 99% s n abov e meet rohs env ironment su bst a nce dire ctiv e reque st m e c h an i c al d a t a ?e c a se : m o lde d pl asti c ?e epoxy : ul 94v-0 rate flame reta rdan t ?e l ead: mil-std-2 02e, method 208 g uarantee d ?e polari ty : sy mbols molded or mar k ed on body ?e m o u n ting po si tio n : a n y ?e w e i ght: 6.1 gram s m a xim u m r a ti ng s a n d electric a l ch a r a c teristi c s ratings a t 2 5 oc a m bient tempera t ure unle s s o t herw i se speci f ied. single p hase , hal f w a v e , 60 hz, r e si sti v e or inductiv e load . for cap a ci tiv e load, dera t e curr ent by 20%. k b p c 60 0 5 kbpc 601 kbpc 602 kbpc 604 kbpc 606 kbpc 608 kbpc 610 sym b ol uni ts m a x i mum recurre n t peak rev e rse v o ltage vrrm 5 0 1 0 0 2 0 0 4 0 0 6 0 0 8 0 0 1000 volts m a x i mum r m s bri dge i nput vo l t age vrms 3 5 7 0 140 2 8 0 4 2 0 5 6 0 700 volts m a x i mum dc blo cking voltage v d c 5 0 1 0 0 2 0 0 4 0 0 6 0 0 8 0 0 1000 volts m a x i mum a verage for w a rd rect if ie d output cur r e nt at tc = 50oc i o 6 . 0 amps peak for w a rd surge current 8.3 m s single ha lf sine- w av e super i mposed on r a ted l o ad (j edec method) i f s m 1 2 5 amps m a x i mum for w a rd voltage drop pe r e l ement at 3.0 a dc v f 1 . 0 volts @t a = 25 j 5.0 m a xi mum cd rever s e cur r e nt at rated dc blocking vo lta g e per ele m ent @tc = 100 j ir 500 uamps i 2 t rati ng fo r fusing (t<8. 3ms ) i 2 t 1 2 7 a2sec t y pi cal juncti on cap acitance ( not e1) c j 1 6 6 p f oper ati ng temp erature range tj -55 to + 125 j stor age tempe r atur e range tstg -55 to + 150 j notes : 1 . measu r ed a t 1 mhz and a pplied rev e rse v o ltage o f 4 . 0 v o lts 2. thermal re sista n ce from junction to am bien t a nd from jun c tion to l ead mo unted on p.c . b. w i th 0.5 x 0.5 " (13x 13mm) copp er pa d s. .038(0.97) 0 0.158(4.0) 0.142(3.6) 9 0.85(21.6)min kbpc unit:inch(mm) parameter
http://www.yeashin.com 2 rev.02 20120305 kbpc6005 thru kbpc610 device characteristics
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